Semiconductor device and method of forming the same

ABSTRACT

A semiconductor device includes a gate electrode, spacers and a hard mask structure. The spacers are disposed on opposite sidewalls of the gate electrode. The hard mask structure includes a first hard mask layer and a second hard mask layer. A lower portion of the first hard mask layer is disposed between the spacers and on the gate electrode, and a top portion of the first hard mask layer is surrounded by the second hard mask layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 16/164,779, filed onOct. 18, 2018, and claims the priority benefit of U.S. provisionalapplication Ser. No. 62/712,217, filed on Jul. 31, 2018. The entirety ofeach of the above-mentioned patent applications is hereby incorporatedby reference herein and made a part of this specification.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC design and materialshave produced generations of ICs where the generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased.

As the semiconductor device scaling down continues, challenges infabrication may arise. For example, scaling down has also increased therisk of bridging or electrical shorting problems, which would degradesemiconductor device performance or even cause device failures. Althoughexisting semiconductor fabrication methods have been generally adequatefor their intended purposes, they have not been entirely satisfactory inall respects.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the criticaldimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIGS. 1A to 1K are cross-sectional views at various stages of forming asemiconductor device in accordance with some embodiments of the presentdisclosure.

FIGS. 2A to 2C are cross-sectional views at various stages of forming asemiconductor device in accordance with some embodiments of the presentdisclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of asecond feature over or over a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the disclosure may repeat reference numerals and/or letters inthe various examples. This repetition is for the purpose of simplicityand clarity and does not in itself dictate a relationship between thevarious embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “over”, “overlying”, “above”, “upper” and the like, may be usedherein for ease of description to describe one element or feature'srelationship to another element(s) or feature(s) as illustrated in thefigures. The spatially relative terms are intended to encompassdifferent orientations of the device in use or operation in addition tothe orientation depicted in the figures. The apparatus may be otherwiseoriented (rotated 90 degrees or at other orientations) and the spatiallyrelative descriptors used herein may likewise be interpretedaccordingly.

The embodiments of the present disclosure describe the exemplarymanufacturing processes of a three-dimensional structure with heightdifferences and the structure(s) fabricated there-from. Certainembodiments of the present disclosure describe the exemplarymanufacturing process of one or more FinFETs and the FinFETs fabricatedthere-from, where the FinFETs may also referred to as a semiconductordevice herein. The FinFET may be formed on bulk silicon substrates incertain embodiments of the present disclosure. Still, the FinFET may beformed on a silicon-on-insulator (SOI) substrate as alternatives. Also,in accordance with the embodiments, the silicon substrate may includeother conductive layers or other semiconductor elements, such astransistors, diodes or the like. The embodiments are not limited in thiscontext.

FIGS. 1A to 1K are cross-sectional views at various stages of forming asemiconductor device 10 in accordance with some embodiments of thepresent disclosure. In some embodiments, the semiconductor device 10 isa field effect transistor such as a fin field effect transistor(FinFET). The FinFET refers to any fin-based, multi-gate transistor. Inalternative some embodiments, the field effect transistor may be aplanar metal-oxide-semiconductor field effect transistor (MOSFET). Othertransistor structures and analogous structures, such as gate-all-around(GAA) field effect transistor or tunneling field effect transistor(TFET), are within the contemplated scope of the disclosure. The fieldeffect transistor may be included in a microprocessor, memory cell,and/or other integrated circuit (IC). In some embodiments, thesemiconductor device 10 is a long channel field effect transistor. Inalternative some embodiments, the semiconductor device 10 is a shortchannel field effect transistor.

In addition, the semiconductor device 10 of FIGS. 1A to 1K may befurther processed using CMOS technology processing. Accordingly, it isunderstood that additional processes may be provided before, during, andafter the method for forming the semiconductor device of FIGS. 1A to 1K,and that some other processes may only be briefly described herein.Also, FIGS. 1A to 1K are simplified for a better understanding of theconcepts of the present disclosure. For example, although the figuresillustrate the interconnect structure of a field effect transistor, itis understood the field effect transistor may be part of an IC thatfurther includes a number of other devices such as resistors,capacitors, inductors, fuses, etc.

Referring to FIG. 1A, a substrate 100 is provided. In some embodiments,the substrate 100 includes a crystalline silicon substrate (e.g.,wafer). The substrate 100 may include various doped regions depending ondesign requirements (e.g., p-type substrate or n-type substrate). Insome embodiments, the doped regions may be doped with p-type and/orn-type dopants. For example, the doped regions may be doped with p-typedopants such as boron or BF₂, n-type dopants such as phosphorus orarsenic and/or combinations thereof. The doped regions may be configuredfor an n-type FinFET, a p-type FinFET or the combination thereof. Inalternative some embodiments, the substrate 100 may be made of someother suitable elemental semiconductor such as diamond or germanium, asuitable compound semiconductor such as gallium arsenide, siliconcarbide, indium arsenide or indium phosphide, or a suitable alloysemiconductor such as silicon germanium carbide, gallium arsenicphosphide or gallium indium phosphide.

As shown in FIG. 1A, at least one fin structure 102 is formed on and/orin the substrate 100. In some embodiments, portions of the substrate 100are removed to define the fin structure 102 protruding from thesubstrate 100. In some embodiments, the substrate 100 and the finstructure 102 are integrally formed, that is, there is no boundarybetween the substrate 100 and the fin structure 102. However, othertechniques for fabricating the fin structure 102 are possible. In someembodiments, the substrate 100 and the fin structure 102 are made of thesame material.

In some embodiments, an isolation structure (not shown) is formedbetween the fin structures 102, such as a local oxidation of silicon(LOCOS) or a shallow trench isolation (STI) structure. The isolationstructure is configured to isolate the two fin structures 102. Theisolation structure may be formed by filling a trench between the finstructures 102 with a dielectric material. In some embodiments, thedielectric material may include SiO₂, SiN, SiON, fluoride-doped silicateglass (FSG), a spin-on dielectric material, any other suitabledielectric material or a combination thereof. The dielectric materialmay be formed by high-density-plasma chemical vapor deposition(HDP-CVD), sub-atmospheric CVD (SACVD) or by spin-on. In someembodiments, the isolation structure may have a multi-layer structuresuch as a thermal oxide liner layer filled with SiN or SiO₂.

In some embodiments, the fin structure 102 is an active region. In somealternative embodiments, the active regions may be formed in thesubstrate 100 and include various doping configurations depending ondesign requirements as known in the art. In some alternativeembodiments, the active region may be doped with p-type or n-typedopants. For example, the active regions may be doped with p-typedopants such as boron or BF₂, n-type dopants such as phosphorus orarsenic and/or combinations thereof. The active regions may beconfigured for an N-type metal-oxide-semiconductor field effecttransistor (referred to as an NMOSFET), or alternatively configured fora P-type metal-oxide-semiconductor field effect transistor (referred toas a PMOSFET).

A plurality of gate structures 110 are disposed on the fin structure 102and cross over the fin structure 102, as shown in FIG. 1A. The gatestructure 110 includes a gate dielectric layer 112, a gate electrode 114and a spacer 116, for example. The gate dielectric layer 112 is disposedbetween the fin structure 102 and the gate electrode 114, and the spacer116 is in contact with the gate electrode 114, but the disclosure is notlimited thereto. In some alternative embodiments, the gate dielectriclayer 112 is further disposed on a sidewall of the gate electrode 114and between the gate electrode 114 and the spacer 116. The cross sectionin FIG. 1A shows the gate structure 110 being located above the finstructure 102. However, in another cross section taken along anotherdirection, the gate structure 110 continuously covers on sidewalls andtop surfaces of the fin structures 102. In some embodiments, a height ofthe gate structure 110 ranges from 65 nm to 85 nm.

In some embodiments, the material of the gate dielectric layer 112includes SiO₂, SiN, high k dielectrics such as metal oxides, or acombination thereof. Examples of the metal oxides include oxides of Li,Be, Mg, Ca, Sr, Sc, Y, Zr, Hf, Al, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy,Ho, Er, Tm, Yb, Lu, and/or mixtures thereof. In some embodiments, themethod of forming the gate dielectric layer 112 may include a depositionprocess. The deposition process may include atomic layer deposition(ALD), molecular beam deposition (MBD), chemical vapor deposition (CVD),physical vapor deposition (PVD), flowable chemical vapor deposition(FCVD), thermal oxidation, UV-ozone oxidation, or a combination thereof.In some embodiments, the gate structure 110 may further include aninterfacial layer (not shown) to minimize stress between the gatedielectric layer 112 and the fin structure 102. The interfacial layermay be formed of SiO₂ or SiON grown by a thermal oxidation process. Forexample, the interfacial layer can be grown by a rapid thermal oxidation(RTO) process or in an annealing process including oxygen.

In some embodiments, the gate electrode 114 is single-layer structure.In some alternative embodiments, the gate electrode 114 is multi-layerstructure. In some embodiments, the material of the gate electrode 114includes titanium (Ti), tantalum (Ta), tungsten (W), aluminum (Al),zirconium (Zr), hafnium (Hf), titanium aluminum (TiAl), tantalumaluminum (TaAl), tungsten aluminum (WAl), zirconium aluminum (ZrAl),hafnium aluminum (HfAl), titanium nitride (TiN), tantalum nitride (TaN),titanium silicon nitride (TiSiN), tantalum silicon nitride (TaSiN),tungsten silicon nitride (WSiN), titanium carbide (TiC), tantalumcarbide (TaC), titanium aluminum carbide (TiAlC), tantalum aluminumcarbide (TaAlC), titanium aluminum nitride (TiAlN), tantalum aluminumnitride (TaAlN), any other suitable metal-containing material or acombination thereof. In some embodiments, the method of forming the gateelectrode 114 may include a deposition process and then a planarizationprocess. The deposition process may include atomic layer deposition(ALD), molecular beam deposition (MBD), chemical vapor deposition (CVD),physical vapor deposition (PVD), flowable chemical vapor deposition(FCVD), or a combination thereof. The planarization process may includea chemical mechanical polishing (CMP) process, an etch process, or othersuitable process. Moreover, the gate electrode 114 may further include abarrier layer, a work function layer, a liner layer, an interface layer,a seed layer, an adhesion layer, etc. In some embodiments, the gateelectrode 114 is also referred as a metal gate (MG), for example.

In some embodiments, in the gate structure 110, the spacer 116 isdisposed adjacent to the two sides of the gate electrode 114. In someembodiments, the spacer 116 is single-layer. In some alternativeembodiments, the spacer 116 may be multiple-layer structure. In someembodiments, the material of the spacer 116 includes SiO₂, SiN, SiON,SiCN, SiOCN or other suitable material. In some embodiments, thematerial of the spacer 116 may be SiOCN. In some embodiments, the spacer116 has a thickness in the range of about 1 nm to about 5 nm, such asabout 2 nm to about 3 nm. In some embodiments, the method of forming thespacer 116 may include a deposition process and then an etching process.The deposition process may include atomic layer deposition (ALD),molecular beam deposition (MBD), chemical vapor deposition (CVD),physical vapor deposition (PVD), flowable chemical vapor deposition(FCVD), or a combination thereof. The etching process may include ananisotropic etching process or other suitable process.

A source-drain region 120 is disposed in the fin structure 102 and/orthe substrate 100 aside the gate structure 110. In some embodiments, thesource-drain region 120 is disposed adjacent to the two sides of thespacer 116. In some embodiments, portions of the fin structure 102 areremoved to form recesses using photolithography and etching processes,and then, the source-drain region 120 is formed by being implanted afterbeing epitaxially (epi) grown in the recesses. The source-drain region120 is located within the recess and has a top surface which issubstantially flush with or coplanar with a top surface of the finstructure 102. However, the disclosure is not limited thereto; in somealternative embodiments, the source-drain region 120 protrudes from therecess and has the top surface higher than the top surface of the finstructure 102. In some embodiments, the source-drain region 120, such assilicon germanium (SiGe), is epitaxial-grown by a LPCVD process to formthe source and drain of the p-type FinFET (or the PMOSFET). Inalternative some embodiments, the source-drain region 120, such assilicon carbon (SiC), is epitaxial-grown by a LPCVD process to form thesource and drain of the n-type FinFET (or the NMOSFET). In addition,although the source-drain region 120 is shaped as a rectangle, thedisclosure is not limited thereto. In some alternative embodiment, thesource-drain region 120 may be shaped as a diamond or other suitableshape. In some embodiments, the source-drain region 120 is optionallyformed with silicide top layer (not shown) by silicidation.

A contact etch stop layer (CESL) 122 is disposed aside the gatestructure 110. In some embodiments, the CESL 122 is disposed onsidewalls of the gate structure 110 and extended onto the source-drainregion 120. The CESL 122 protects the gate structure 110 from beingdamaged during contact etching. In some embodiments, the CESL 122 is incontact with the spacer 116. In other words, the spacer 116 is disposedbetween the corresponding gate electrode 114 and the CESL 122. In someembodiments, the CESL 122 has a top surface substantially flush with orcoplanar with a top surface of the gate structure 110. That is, the CESL122 has the top surface substantially flush with or coplanar with topsurfaces of the gate electrode 114 and the spacer 116. In someembodiments, the material of the CESL 122 includes SiN, SiCN, SiCON or acombination thereof. In some embodiments, the material of the CESL 122may be SiN. In some embodiments, the CESL 122 has a thickness in therange of about 1 nm to about 3 nm. In some embodiments, the method offorming the CESL 122 may include a deposition process and then aplanarization process. The deposition process may include atomic layerdeposition (ALD), molecular beam deposition (MBD), chemical vapordeposition (CVD), physical vapor deposition (PVD), or a combinationthereof. The planarization process may include a chemical mechanicalpolishing (CMP) process, an etch process, or other suitable process.

An inter-layer dielectric 124 is disposed between the gate structures110 over the CESL 122. In some embodiments, the material of theinter-layer dielectric 124 is different from the material of the CESL122. In some embodiments, the inter-layer dielectric 124 has a differentetch selectivity from the spacer 116 and the CESL 122. In someembodiments, the material of the inter-layer dielectric 124 includesSiO₂, SiN, SiON, SiCN or other suitable material. In some embodiments,the material of the inter-layer dielectric 124 may be SiO₂ or FCVDoxide. In some embodiments, the inter-layer dielectric 124 has a topsurface substantially flush with or coplanar with the top surfaces ofthe gate structure 110 and the CESL 122. That is, the inter-layerdielectric 124 has the top surface substantially flush with or coplanarwith the op surfaces of the gate electrode 114, the spacer 116 and theCESL 122. In some embodiments, the method of forming the inter-layerdielectric 124 may include a deposition process and then a planarizationprocess. The deposition process may include atomic layer deposition(ALD), molecular beam deposition (MBD), chemical vapor deposition (CVD),physical vapor deposition (PVD), flowable chemical vapor deposition(FCVD), or a combination thereof. The planarization process may includea chemical mechanical polishing (CMP) process, an etch process, or othersuitable process. In some embodiments, the inter-layer dielectric 124 issingle-layer structure. In some alternative embodiments, the inter-layerdielectric 124 is multi-layer structure. In some alternativeembodiments, the inter-layer dielectric 124 may be multi-layer structureand have a hard mask layer as an uppermost layer, for example.

Referring to FIG. 1B, portions of the gate electrode 114 and the spacer116 are removed, so as to form a recess U exposing portions of the CESL122. In some embodiments, after the removal process, the top surface ofthe gate structure 110 is lower than the top surfaces of the CESL 122and the inter-layer dielectric 124, in other words, the top surfaces ofthe gate electrode 114 and the spacer 116 are lower than the topsurfaces of the CESL 122 and the inter-layer dielectric 124. In someembodiments, the top surface of the spacer 116 is not substantiallyflush with or coplanar with the top surface of the gate electrode 114.For example, the top surface of the spacer 116 is higher than the topsurface of the gate electrode 114 and lower than the top surface of theCESL 122. In other words, in some embodiments, the recess U has astepped sidewall, for example. However, the disclosure is not limitedthereto; in some alternative embodiments, after the removal process, thetop surface of the spacer 116 may be substantially flush with orcoplanar with the top surface of the gate electrode 114. Accordingly,the recess U may have a straight sidewall, for example. In somealternative embodiments, when the gate dielectric layer 112 is furtherdisposed between the spacer 116 and the gate electrode 114, the gatedielectric layer 112 is partially removed to have a top surfacesubstantially flush with or coplanar with the top surface of the gateelectrode 114.

In some embodiments, the gate electrode 114 and the spacer 116 may beremoved by an etching process simultaneously or separately. In someembodiments, the top portion of the gate electrode 114 is removed by anetch back process, for example. In some embodiments, during the removalprocess, the CESL 122 and the inter-layer dielectric 124 are not removedwith respect to the removals of the gate electrode 114 and the spacer116 due to the specific etching selectivity chosen based on the materialdifferences. In other words, the CESL 122 does not undergo a pull-backetching.

After the portions of the gate electrode 114 and the spacer 116 areremoved, a conductive layer 126 is formed in a portion of the recess Uto cover the gate electrode 114. In some embodiments, the conductivelayer 126 has a top surface lower than the top surface of the spacer116. However, the disclosure is not limited thereto; in some alternativeembodiments, the conductive layer 126 may have the top surfacesubstantially flush with or coplanar with the top surface of the spacer116. In some embodiments, the material of the conductive layer 126includes aluminum (Al), tungsten (W), copper (Cu), combinations thereofor any other suitable conductive material. In some embodiments, thematerial of the conductive layer 126 includes fluorine-free tungsten,for example. In some alternative embodiments, the conductive layer 126is optional, that is, the conductive layer 126 may be omitted.

Referring to FIG. 1C, then, a material layer 130 is formed over thesubstrate 100 to fill up the recess U and cover the inter-layerdielectric 124. In some embodiments, the material of the material layer130 is different from the materials of the spacer 116, the CESL 122 andthe inter-layer dielectric 124. In some embodiments, the material of thematerial layer 130 has a different etch selectivity from the materialsof the spacer 116, the CESL 122 and the inter-layer dielectric 124. Insome embodiments, the etch selectivity between the materials of thematerial layer 130 and the CESL 122 is larger than 20, for example. Insome embodiments, the material of the material layer 130 includessilicon such as amorphous silicon or other suitable material. In someembodiments, the material of the material layer 130 may be amorphoussilicon. In some embodiments, the material layer 130 is formed by usinga suitable process such as atomic layer deposition (ALD), molecular beamdeposition (MBD), chemical vapor deposition (CVD), physical vapordeposition (PVD), or a combination thereof. In some alternativeembodiments, before forming the material layer 130, a dielectric layermay be conformally formed on the conductive layer 126, the spacer 116,the CESL 122 and the inter-layer dielectric 124, and the material of thedielectric layer has a different etch selectivity from the materials ofthe spacer 116, the CESL 122 and the inter-layer dielectric 124, forexample.

Referring to FIG. 1D, the material layer 130 is partially removed, sothat a top surface of the material layer 130 is lower than the topsurface of the CESL 122 while the material layer 130 covers the spacer116 and the conductive layer 126 on the gate electrode 114. In otherwords, the top surface of the material layer 130 is disposed at a heightbetween the top surfaces of the CESL 122 and the spacer 116. In someembodiments, a height hl of the material layer 130 ranges from about 5nm to about 15 nm. In some embodiments, the material layer 130 may beremoved by a planarization process and an etch back process. Theplanarization process may include a chemical mechanical polishing (CMP)process, an etch process, or other suitable process. In someembodiments, the etch back process may include a dry etching processwith using 0.1% NF₃ as reaction gas for etching Si, using 30% NF₃ asreaction gas for etching SiN, using NF₃ and H₂ as reaction gases foretching Si, using NF₃, H₂ and O₂ as reaction gases for etching SiN orusing other suitable gases. In some alternative embodiments, the etchingprocess may include a wet etching process. In some embodiments, sincethe material layer 130 has the different etch selectivity from the CESL122 and the inter-layer dielectric 124, during the etch back process,the CESL 122 and the inter-layer dielectric 124 are not removed withrespect to the removal of the material layer 130.

Referring to FIG. 1E, a portion of the CESL 122 is removed to form ahollow portion H, until the top surface of the CESL 122 is substantiallyflush with the top surface of the spacer 116. In some embodiments, afterthe removal process, the top surface of the CESL 122 is lower than thetop surface of the inter-layer dielectric 124 and exposed by thematerial layer 130. In some embodiments, the removal process is alsoreferred as a pull-back etching. In some embodiments, during the removalprocess, the material layer 130 is also partially removed to form adummy hard mask layer 132 having a rounded top corner, for example. Insome embodiments, the dummy hard mask layer 132 is disposed over thegate structure 110. In detail, the dummy hard mask layer 132 is formedon the conductive layer 126 and extended onto the spacer 116 beyond thegate electrode 114. Accordingly, the dummy hard mask layer 132 ismushroom-shaped, for example. The dummy hard mask layer 132 has a topsurface 132T and a sidewall 132S, and the top corner is formed at whichthe top surface 132T and the sidewall 132S are connected. The topsurface 132T is substantially flat, and is lower than the top surface ofthe inter-layer dielectric 124 and higher than the top surfaces of thespacer 116 and the CESL 122. In some embodiments, the top corner of thedummy hard mask layer 132 is rounded in the range of larger than 90degrees and may be in the range from 90 to 135 degrees. In someembodiments, the dummy hard mask layer 132 covers the whole top surfaceof the corresponding spacer 116. However, the disclosure is not limitedthereto. In some alternative embodiments, a portion of the spacer 116may be exposed by the dummy hard mask layer 132. In some embodiments, adistance d1 between a sidewall of the inter-layer dielectric 124 and thesidewall 132S of the dummy hard mask layer 132 ranges about 1 nanometerto about 7 nm. In some embodiments, the distance d1 is about 1 nanometerto about 3 nm. In some embodiments, the distance d1 is substantially thesame as the thickness of the CESL 122. In some embodiments, the dummyhard mask layer 132 has a height h2 less than a height of the gateelectrode 114, and a height difference therebetween is 1 nm to 5 nm, forexample. In some embodiments, the height h2 is in the range of about 5nm to about 15 nm. In some alternative embodiments, the height h2 may belarger than 10, for example. In some embodiments, the height h2 of thedummy hard mask layer 132 is substantially equal to the height h1 of thematerial layer 130. However, the disclosure is not limited thereto; insome alternative embodiments, after the removal process, the height h2of the dummy hard mask layer 132 may be less than the height h1 of thematerial layer 130.

In some embodiments, the hollow portion H is formed by partiallyremoving the CESL 122 and the material layer 130, and the hollow portionH is disposed between the dummy hard mask layer 132 and the inter-layerdielectric 124. In some embodiments, the hollow portion H is invertedU-shaped, for example. In some embodiments, the hollow portions Hexposes the top surface 132T and the sidewall 132S of the dummy hardmask layer 132 and the top surface of the CESL 122. In some embodiments,the CESL 122 and the material layer 130 may be removed by an etchingprocess simultaneously or separately. In some embodiments, since theinter-layer dielectric 124 has the different etch selectivity from theCESL 122 and the material layer 130, during the etching process, theinter-layer dielectric 124 is not removed with respect to the removalsof the CESL 122 and the material layer 130. In some embodiments, theetching process may include a dry etching process with using 0.1% NF₃ asreaction gas for etching Si, using 30% NF₃ as reaction gas for etchingSiN, using NF₃ and H₂ as reaction gases for etching Si, using NF₃, H₂and O₂ as reaction gases for etching SiN or using other suitable gases.In some alternative embodiments, the etching process may include a wetetching process.

Referring to FIG. 1F, a dielectric pattern 134 is formed in the hollowportion H to cover the top surface 132T and the sidewall 132S of thedummy hard mask layer 132 and the top surface of the CESL 122. In someembodiments, the dielectric pattern 134 is filled into the hollowportion H, and has a top surface substantially flush with or coplanarwith the top surface of the inter-layer dielectric 124. In someembodiments, the material of the dielectric pattern 134 is differentfrom the material of the dummy hard mask layer 132. In some embodiments,the dielectric pattern 134 has a different etch selectivity from theinter-layer dielectric 124 and the dummy hard mask layer 132. In someembodiments, the material of the dielectric pattern 134 includes high kdielectrics with a k constant larger than 10 such as metal oxides, metalnitrides, metal silicates or other suitable high k dielectrics. In someembodiments, the high k dielectrics include ZrO₂, HfO₂, HfSiO, ZrSiO,Y₂O₃, La₂O₅, Gd₂O₅, TiO₂, Ta₂O₅, HfErO, HfLaO, HfYO, HfGdO, HfAlO,HfZrO, HfTiO, HfTaO, SrTiO, a combination thereof or other suitablematerial. In some embodiments, the material of the dielectric pattern134 may be ZrO₂. In some embodiments, the method of forming thedielectric pattern 134 may include a deposition process and then aplanarization process. The deposition process may include atomic layerdeposition (ALD), molecular beam deposition (MBD), chemical vapordeposition (CVD), physical vapor deposition (PVD), or a combinationthereof. The planarization process may be performed by using the topsurface of the inter-layer dielectric 124 as a stop layer and mayinclude a chemical mechanical polishing (CMP) process, an etch process,or other suitable process.

Referring to FIG. 1G, a conductive structure 136 is formed over andelectrically connected to the source-drain region 120. In someembodiments, the conductive structure 136 is formed in the inter-layerdielectric 124, and the conductive structure 136 has a top surfacesubstantially flush with or coplanar with the top surfaces of theinter-layer dielectric 124 and the dielectric pattern 134. In someembodiments, an opening is formed in the inter-layer dielectric 124 andthe CESL 122 to expose a portion of the source-drain region 120, andthen the conductive structure 136 is filled in the opening toelectrically connect to the source-drain region 120. In some alternativeembodiments, the opening may be formed in the CESL 122 by removing theinter-layer dielectric 124 between the CESL 122, and thus the conductivestructure 136 is in contact with the CESL 122 without the inter-layerdielectric 124 therebetween. In some embodiments, the opening is formedby an etching process, such as dry etching process, wet etching processor a combination thereof, and the conductive structure 136 may be formedby a sputtering process, a deposition process, such as atomic layerdeposition (ALD), molecular beam deposition (MBD), chemical vapordeposition (CVD), physical vapor deposition (PVD) or a combinationthereof, or any other suitable process. In some alternative embodiments,the conductive structure 136 may be formed by a deposition process andthen a planarization process, in this case, top portions of theinter-layer dielectric 124 and the dielectric pattern 134 may be notremoved or partially removed. In some embodiments, the material of theconductive structure 136 may include a metal, such as copper, titanium,tungsten, cobalt, aluminum, any other suitable metal or a combinationthereof. Accordingly, the conductive structure 136 is also referred toas “MD (metal drain)” contact. In some embodiments, the conductivestructure 136 may be multiple-layer structure and include conductivelayers 136 a, 136 b, and the conductive layer 136 b is disposed on theconductive layer 136 a and includes a material having resistance lowerthan the material of the conductive layer 136 a. For example, thematerial of the conductive layer 136 a includes cobalt, and the materialof the conductive layer 136 b includes tungsten. In some alternativeembodiments, the conductive structure 136 is single-layer. Moreover, theconductive structure 136 may further include barrier layer.

Referring to FIG. 1H, a portion of the dielectric pattern 134 is removedto form a hard mask layer 138 and exposes the top surface 132T of thedummy hard mask layer 132. In some embodiments, the hard mask layer 138is disposed on the CESL 122, and the hard mask layer 138 surrounds andexposes the top surface 132T of the dummy hard mask layer 132. Thedielectric pattern 134 is partially removed by a planarization processby using the top surface 132T of the dummy hard mask layer 132 as a stoplayer, and the planarization process may include a chemical mechanicalpolishing (CMP) process, an etch process, or other suitable process. Insome embodiments, during the removal process, portions of theinter-layer dielectric 124 and the conductive structure 136 are alsoremoved. In some embodiments, portions of the inter-layer dielectric 124and the conductive layer 136 b are removed while the conductive layer136 a remains intact since protected by the conductive layer 136 b.After the removal process, the top surface of the hard mask layer 138 issubstantially flush with or coplanar with the top surface 132T of thedummy hard mask layer 132 and the top surfaces of the inter-layerdielectric 124 and the conductive structure 136. In some embodiments,the dummy hard mask layer 132 is not removed during the removal process,but the disclosure is not limited thereto. In some alternativeembodiments, the top portion of the dummy hard mask layer 132 may bepartially removed during the removal process, and thus the height of thedummy hard mask layer 132 may be reduced. In addition, after the removalprocess, a flatness of the top surface 132T of the dummy hard mask layer132 may be increased.

Referring to FIGS. 1I and 1J, the dummy hard mask layer 132 is replacedby a hard mask layer 142. In some embodiments, as shown in FIG. 1I, thedummy hard mask layer 132 is removed to form an opening O exposing theconductive layer 126 and the spacer 116 on the gate electrode 114. Insome embodiments, the dummy hard mask layer 132 is entirely removed byan etching process. In some embodiments, the etching process may includea dry etching process with using NF₃ as reaction gas. In somealternative embodiments, the etching process may include a wet etchingprocess with ozonated deionized water (DIO₃) to remove the by-product.In some embodiments, since the dummy hard mask layer 132 has thedifferent etch selectivity from the hard mask layer 138 and the spacer116, during the etching process, the hard mask layer 138 and the spacer116 are not removed with respect to the removal of the dummy hard masklayer 132.

Then, as shown in FIG. 1J, the hard mask layer 142 is formed in theopening O to cover the conductive layer 126 and the spacer 116 on thegate electrode 114. In some embodiments, the hard mask layer 142 isfilled into the opening O to seal up the opening O. In some embodiments,since the hard mask layer 142 is formed by replacing the dummy hard masklayer 132, the profile of the hard mask layer 142 including a topsurface 142T, a sidewall 142S and a rounded top corner, a height h3 ofthe hard mask layer 142 and a distance d2 between the hard mask layer142 and the inter-layer dielectric 124 are substantially the same as orsimilar to the profile of the dummy hard mask layer 132 including thetop surface 132T, the sidewall 132S and the rounded top corner, theheight h3 of the dummy hard mask layer 132 and the distance d1 betweenthe dummy hard mask layer 132 and the inter-layer dielectric 124described in FIG. 1E and thus omitted herein. In some embodiments, thehard mask layer 142 and the hard mask layer 138 together constitute ahard mask structure 144. In some embodiments, the hard mask structure144 is disposed over the gate structure 110 and the CESL 122. In someembodiments, the top surface of the hard mask structure 144 issubstantially flush with or coplanar with the top surface of theinter-layer dielectric 124, wherein the top surface of the hard maskstructure 144 is the top surfaces of the corresponding hard mask layers138, 142. In some embodiments, the material of the hard mask layer 142is different from the material of the hard mask layer 138. In someembodiments, a k constant of the material of the hard mask layer 142 islower than a k constant of the material of the hard mask layer 138. Insome embodiments, the hard mask layer 142 has a different etchselectivity from the hard mask layer 138 and the inter-layer dielectric124. In some embodiments, the material of the hard mask layer 142includes low-k dielectrics with a k constant less than 5 such as SiOC,SiCN, SiN, SiO₂, a combination thereof or other suitable low-kdielectrics. In some embodiments, the material of the hard mask layer142 may be SiOC. In some embodiments, the hard mask layer 142 is made ofa single material, but the disclosure is not limited thereto. In somealternative embodiments, the hard mask layer 142 may include multiplematerials, in other words, the opening O may be sealed up by at leasttwo materials. For example, the opening O is partially filled with afirst material, and then is partially filled with a second materialwhich is different from the first material. In some embodiments, themethod of forming the hard mask layer 142 may include a depositionprocess and then a planarization process. The deposition process mayinclude atomic layer deposition (ALD), molecular beam deposition (MBD),chemical vapor deposition (CVD), physical vapor deposition (PVD), or acombination thereof. The planarization process may be performed by usingthe top surface of the inter-layer dielectric 124 as a stop layer andmay include a chemical mechanical polishing (CMP) process, an etchprocess, or other suitable process.

Referring to FIG. 1K, a dielectric layer 146 is formed on the hard maskstructure 144 and the conductive structure 136. In some embodiments, thematerial of the dielectric layer 146 may be SiO₂, SiN, SiON, SiCN, orany other suitable material. In some embodiments, the dielectric layer146 is formed by using a suitable process such as atomic layerdeposition (ALD), molecular beam deposition (MBD), chemical vapordeposition (CVD), physical vapor deposition (PVD), or a combinationthereof. In some embodiments, the dielectric layer 146 is single-layerstructure. In some alternative embodiments, the dielectric layer 146 ismulti-layer structure.

Then, an opening O1 is formed in the dielectric layer 146 and the hardmask layer 142, an opening O2 is formed in the dielectric layer 146, anda plug 148 and a plug 150 respectively are formed in the opening O1 andthe opening O2 and respectively are electrically connected to the gatestructure 110 and the conductive structure 136. That is, the opening O1is configured for the plug 148 to be formed and electrically connectedto the gate structure 110, and the opening O2 is configured for the plug150 to be formed and electrically connected to the conductive structure136. In some embodiments, the plug 148 is surrounded by the hard maskstructure 144. In some embodiments, as shown in FIG. 1K, one opening O1and one opening O2 are shown for illustration purpose, but thedisclosure is not limited thereto. In some alternative embodiments, thenumber of the opening O1 and the number of the opening O2 mayrespectively be more than one.

In some embodiments, the openings O1, O2 may be formed byphotolithography and etching processes. In some embodiments, theopenings O1, O2 may be formed in different steps. However, in somealternative embodiments, the opening O1 and the opening O2 may be formedin the same step. In some embodiments, since the hard mask layer 138 ofthe hard mask structure 144 has the different etch selectivity from thedielectric layer 146, during the etching process of the opening O1 forthe plug 148, the hard mask layer 138 remains intact while the hard masklayer 142 is partially removed during the etching process. Thus, thehard mask layer 138 is used as a self-aligned mask, and the etchingprocess for forming the opening O1 is referred to as a self-alignedetching process. Accordingly, due to the self-aligned formed opening O1,the plug 148 formed in the opening O1 is self-aligned formed, and theprocess window of the plug 148 can be enlarged. In some embodiments, dueto the above self-aligned process, the plug 148 is also referred to as aself-aligned contact.

In some embodiments, the method of forming the plugs 148, 150 mayinclude: a deposition process and then a planarization process, asputtering process and then a planarization process, or anelectro-chemical plating process and then a planarization process. Thedeposition process may include atomic layer deposition (ALD), molecularbeam deposition (MBD), chemical vapor deposition (CVD), physical vapordeposition (PVD), or a combination thereof. The planarization processmay include a chemical mechanical polishing (CMP) process, an etchprocess, or other suitable process. In some embodiments, the materialsof the plug 148 and the plug 150 may respectively be conductivematerial, such as cobalt, tungsten, copper, titanium, tantalum,aluminum, zirconium, hafnium, or other suitable material. In someembodiments, the plug 148 contacts the conductive layer 126. That is,the plug 148 is electrically connected to the gate structure 110 throughthe conductive layer 126. In some embodiments, the plug 148 contacts thehard mask layer 142. In some embodiments, the plug 148 is also referredas a via gate (VG), and the plug 150 is also referred as a via drain(VD), for example.

In some embodiments, the dummy hard mask layer 132 may be replaced afterforming the conductive structure 136. However, in some alternativeembodiments, the conductive structure 136 may be formed after formingthe hard mask structure 144 and before forming the dielectric layer 146,that is, the hard mask structure 144 may be formed before forming thedielectric layer 146.

In some embodiments, the hard mask structure 144 is disposed over thegate electrode 114 and has a width wider than the gate electrode 114therebeneath. The isolating structure including the spacer 116 and theCESL 122 are disposed under the hard mask structure 144. In someembodiments, the hard mask structure 144 includes at least twomaterials, which are a low-k material of the hard mask layer 142 and ahigh-k material of the hard mask layer 138. The hard mask layer 142surrounds and is in contact with the plug 148, and the hard mask layer138 surrounds and is in contact with the hard mask layer 142. The topsurface of the hard mask layer 138 is substantially flush with orcoplanar with the top surface of the hard mask layer 142, that is, atleast a portion of the hard mask layer 142 is not covered by the hardmask layer 138, and thus the hard mask layer 138 is not in contact withthe plug 148. In some embodiments, the hard mask layer 138 has anopening exposing the hard mask layer 142 and a thickness of the hardmask layer 138 is gradually reduced from the outer to the inner. In someembodiments, the hard mask layer 138 is shaped as a hollow ring, forexample. The hard mask layer 138 covers the top surface of the CESL 122,and the hard mask layer 142 covers the top surfaces of the conductivelayer 126 on the gate electrode 114 and the spacer 116. In someembodiments, the hard mask layer 142 is partially disposed between theCESL 122 and the plug 148 and partially protrudes from the CESL 122, andin detail, the hard mask layer 142 is partially disposed between thespacer 116 and the plug 148 and partially protrudes from the spacer 116and extends onto the top surface of the spacer 116. The hard mask layer138 covers a portion of the sidewall of the hard mask layer 142 andexposes the top surface of the hard mask layer 142. In some embodiments,the bottom surface 138B of the hard mask layer 138 is disposed at aheight between the top surface and the bottom surface of the hard masklayer 142. In some embodiments, an interface between the hard mask layer138 and the hard mask layer 142 is curved. In other words, the sidewallof the hard mask layer 142 includes a curved portion being in contactwith the hard mask layer 138 and a straight portion being in contactwith the spacer 116. In some embodiments, an outer sidewall of the hardmask structure 144 (i.e., an outer sidewall of the hard mask layer 138)is flush with an outer sidewall of the CESL 122, and an inner sidewallof the hard mask structure 144 (i.e., the straight portion of thesidewall of the hard mask layer 142) is flush with the sidewall of thegate structure 110. In some embodiments, for good isolation, a width w1of the hard mask layer 138 is wider than a width w2 of the spacer 116 byat least 2 nm such as 2 to 4 nm. In some embodiments, a height h4 of thehard mask layer 138 is larger than 5 nm, for example. In someembodiments, the hard mask structure 144 is T-shaped, for example. Insome embodiments, the hard mask layer 138 is not in contact with theplug 148, but the disclosure is not limited thereto. In some alternativeembodiments, the hard mask layer 138 may be in contact with the plug 148at a contact point formed among a sidewall of the plug 148, the hardmask layer 138 and the hard mask layer 142, and the contact point is atthe inner edge of the hard mask layer 138.

In some embodiments, the hard mask structure 144 is disposed between andinsulates the conductive structure 136 and the gate structure 110 asidethe conductive structure 136, and thereby an isolation therebetween isimproved. Similarly, the hard mask structure 144 is disposed between andinsulates the plug 148 and the conductive structure 136 adjacent to theplug 148, and thereby an isolation therebetween is improved.Accordingly, the risk of a short-circuit bridge between the conductivestructure 136 and the gate structure 110 and between the plug 148 andthe conductive structure 136 is reduced. Moreover, since the hard maskstructure 144 includes at least two materials with different k constant,the k constant of the hard mask structure 144 may be adjusted inaccordance with the requirements. In some embodiments, the semiconductordevice 10 may have the reduced capacitance, thereby enhancing theelectric performance of the semiconductor device 10.

FIG. 2A to FIG. 2C are cross-sectional views at various stages offorming a semiconductor device 20 in accordance with some embodiments ofthe present disclosure. The steps of FIG. 2A to FIG. 2C follow theprocedures of FIG. 1A to FIG. 1I, in other words, the step of FIG. 2A iscontinuously performed after the step of FIG. 1I. The elements similarto or substantially the same as the elements described previously willuse the same reference numbers, and certain details or descriptions(e.g. the relative configurations or electrical connections, and theformations and materials) of the same elements may not be repeatedherein.

Referring to FIG. 2A, a structure same as the structure of FIG. 1I isprovided, and then the spacer 116 is removed, so as to form an air gap Gaside the gate electrode 114 and the gate dielectric layer 112. In someembodiments, the air gap G exposes the sidewalls of the gate dielectriclayer 112 and the gate electrode 114. In some embodiments, the spacer116 is removed by an etching process such as a dry etching process or awet etching process. In some embodiments, during the removal process,the hard mask layer 138, the CESL 122 and the inter-layer dielectric 124are not removed with respect to the removal of the spacer 116 due to thespecific etching selectivity chosen based on the material differences.

Referring to FIG. 2B, a hard mask layer 142 is formed in the opening Oand the air gap G to cover the conductive layer 126 and form an airspacer 200. In some embodiments, the hard mask layer 142 and the hardmask layer 138 together constitute a hard mask structure 144. In someembodiments, the hard mask layer 142 is entirely filled into the openingO and partially filled into the air gap G to seal up the opening O andthe air gap G. That is, some of the air gap G is not filled with thehard mask layer 142 to form the air spacer 200 aside the gate dielectriclayer 112 and the gate electrode 114. In other words, the spacer 116 ofFIGS. 1A to 1I is replaced by the air spacer 200. In some embodiments,depending on the conditions such as molecular weight and adhesion of thematerial of the hard mask layer 142 and the forming method of the hardmask layer 142, an interface between the hard mask layer 142 and the airspacer 200 may be substantially equal to or lower than the top surfaceof the conductive layer 126 or substantially lower than the top surfaceof the gate electrode 114. In some embodiments, the hard mask layer 142is formed on the conductive layer 126 and extended into the air gap G,and thus covers a portion of a sidewall of the conductive layer 126, forexample. In some embodiments, a height h5 of the hard mask layer 142below the top surface of the conductive layer 126 ranges from about 1 nmto about 5 nm, for example. In some alternative embodiments, the hardmask layer 142 further covers a portion of a sidewall of the gateelectrode 114, for example. In some embodiments, the air spacer 200 hasa thickness t2 in the range of about 1 nm to about 5 nm, such as about 2nm to about 3 nm. In some embodiments, the spacer 116 is entirelyremoved, but the disclosure is not limited thereto. In some alternativeembodiments, according to the requirements, the spacer 116 may bepartially removed, in other words, only a portion of the spacer 116 isreplaced by the air spacer 200. Therefore, in some alternativeembodiments, the spacer 116 and the air spacer 200 may be simultaneouslydisposed aside the same gate electrode 114, and the air spacer 200 isdisposed on the spacer 116.

Referring to FIG. 2C, a dielectric layer 146 is formed on the hard maskstructure 144 and the conductive structure 136, and a plug 148 and aplug 150 respectively are formed in the dielectric layer 146 toelectrically connected to the gate structure 110 and the conductivestructure 136.

In some embodiments, since the hard mask structure 144 has a high-k hardmask layer 138 and a low-k hard mask layer 142, the k constant of thehard mask structure 144 may be easily adjusted in accordance with therequirements. In addition, the semiconductor device 20 further includesthe air spacer 200 having a k constant equal to about 1, and thus thehas semiconductor device 20 has the reduced capacitance, therebyenhancing the electric performance of the semiconductor device 20.

In accordance with some embodiments of the disclosure, a semiconductordevice includes a substrate, a gate structure, a plug and a hard maskstructure. The gate structure is disposed over the substrate. The plugis disposed over and electrically connected to the gate structure. Thehard mask structure is disposed over the gate structure and includes afirst hard mask layer and a second hard mask layer. The first hard masklayer surrounds and is in contact with the plug. The second hard masklayer surrounds the first hard mask layer and has a bottom surface at aheight between a top surface and a bottom surface of the first hard masklayer. A material of the first hard mask layer is different from amaterial of the second hard mask layer.

In accordance with alternative embodiments of the disclosure, asemiconductor device includes a substrate, a gate structure, a plug, aCESL and a hard mask structure. The gate structure is disposed over thesubstrate. The plug is disposed over and electrically connected to thegate structure. The CESL is disposed aside the gate structure. The hardmask structure is disposed over the gate structure and includes a firsthard mask layer and a second hard mask layer. The first hard mask layeris partially disposed between the CESL and the plug and partiallyprotrudes from the CESL. The second hard mask layer is disposed asidethe first mask layer on the CESL. A material of the first hard masklayer is different from a material of the second hard mask layer.

In accordance with yet alternative embodiments of the disclosure, amethod of forming a semiconductor device includes following steps. Agate structure is formed over a substrate, wherein the gate structurecomprises a gate electrode and a spacer aside the gate electrode. A CESLis formed aside the gate structure, wherein the spacer is disposedbetween the CESL and the gate electrode. A hard mask structure is formedover the gate structure, wherein the hard mask structure a first hardmask layer and a second hard mask layer, the first hard mask layerpartially protrudes from the CESL, the second hard mask layer isdisposed aside the first mask layer on the CESL, and a material of thefirst hard mask layer is different from a material of the second hardmask layer. A plug is formed over the gate structure, wherein the hardmask structure surrounds the plug.

In accordance with some embodiments of the disclosure, a semiconductordevice includes a gate electrode, spacers and a hard mask structure. Thespacers are disposed on opposite sidewalls of the gate electrode. Thehard mask structure includes a first hard mask layer and a second hardmask layer. A lower portion of the first hard mask layer is disposedbetween the spacers and on the gate electrode, and a top portion of thefirst hard mask layer is surrounded by the second hard mask layer.

In accordance with some embodiments of the disclosure, a semiconductordevice includes a gate electrode, air spacers on opposite sidewalls ofthe gate electrode and a hard mask structure. The air spacers aredisposed on opposite sidewalls of the gate electrode. The hard maskstructure includes a first hard mask layer and a second hard mask layernot integrally formed with the first hard mask layer. The first hardmask covers the gate electrode and the air spacers, and the second hardmask layer surrounds the first hard mask.

In accordance with some embodiments of the disclosure, a method offorming a semiconductor device includes the following steps. A gateelectrode and spacers on sidewalls of the gate electrode are formed. Asacrificial pattern is formed to cover the gate electrode and thespacers. A dielectric pattern is formed to cover and surround a topportion of the sacrificial pattern. A portion of the dielectric patternis formed to expose a top surface of the sacrificial pattern. Thesacrificial pattern is replaced with a first hard mask, wherein theremaining dielectric pattern forms a second mask layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the disclosure.Those skilled in the art should appreciate that they may readily use thedisclosure as a basis for designing or modifying other processes andstructures for carrying out the same purposes and/or achieving the sameadvantages of the embodiments introduced herein. Those skilled in theart should also realize that such equivalent constructions do not departfrom the spirit and scope of the disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a gateelectrode; spacers on opposite sidewalls of the gate electrode; and ahard mask structure, comprising a first hard mask layer and a secondhard mask layer, wherein a lower portion of the first hard mask layer isdisposed between the spacers and on the gate electrode, and a topportion of the first hard mask layer is surrounded by the second hardmask layer.
 2. The semiconductor device as claimed in claim 1, wherein atop surface of the gate electrode is lower than top surfaces of thespacers.
 3. The semiconductor device as claimed in claim 1, wherein atop surface of the gate electrode is substantially flush with topsurfaces of the spacers.
 4. The semiconductor device as claimed in claim1, wherein sidewalls of the lower portion of the first hard mask layeris substantially flush with sidewalls of the spacers.
 5. Thesemiconductor device as claimed in claim 1, wherein the second hard masklayer is not integrally formed with the first hard mask layer.
 6. Thesemiconductor device as claimed in claim 1, wherein an interface of thefirst hard mask layer and the second hard mask layer is curved.
 7. Thesemiconductor device as claimed in claim 1 further comprising a plugpenetrating through the first hard mask layer to electrically connectthe gate electrode.
 8. A semiconductor device, comprising: a gateelectrode; air spacers on opposite sidewalls of the gate electrode; anda hard mask structure, comprising a first hard mask layer and a secondhard mask layer not integrally formed with the first hard mask layer,wherein the first hard mask layer covers the gate electrode and the airspacers, and the second hard mask layer surrounds the first hard masklayer.
 9. The semiconductor device as claimed in claim 8, wherein a kconstant of a material of the first hard mask layer is lower than a kconstant of a material of the second hard mask layer.
 10. Thesemiconductor device as claimed in claim 8 further comprising a contactetch stop layer (CESL) aside the gate structure, wherein an outersidewall of the second hard mask layer is flush with an outer sidewallof the CESL.
 11. The semiconductor device as claimed in claim 10,wherein a top surface of the spacer is substantially coplanar with a topsurface of the CESL.
 12. The semiconductor device as claimed in claim10, wherein a top surface of the spacer is lower than a top surface ofthe CESL.
 13. The semiconductor device as claimed in claim 8, wherein atop surface of the first hard mask layer is substantially flush with atop surface of the second hard mask layer.
 14. The semiconductor deviceas claimed in claim 8 further comprising a conductive layer between thegate electrode and the first hard mask layer.
 15. A method of forming asemiconductor device, comprising: forming a gate electrode and spacerson sidewalls of the gate electrode; forming a sacrificial pattern tocover the gate electrode and the spacers; forming a dielectric patternto cover and surround a top portion of the sacrificial pattern; removinga portion of the dielectric pattern to expose a top surface of thesacrificial pattern; and replacing the sacrificial pattern with a firsthard mask layer, wherein the remaining dielectric pattern forms a secondmask layer.
 16. The method as claimed in claim 15, wherein the step ofreplacing the sacrificial pattern with the first hard mask layercomprises: removing the sacrificial pattern to form an opening; andfilling the opening with the first mask layer.
 17. The method as claimedin claim 15, wherein top surfaces of the spacers are higher than a topsurface of the gate electrode.
 18. The method as claimed in claim 15further comprising forming a contact etch stop layer (CESL) aside thegate electrode and the spacers, wherein the first hard mask layerpartially protrudes from the CESL.
 19. The method as claimed in claim18, wherein a method of forming the sacrificial pattern comprises:forming a dielectric material over the spacer and the CESL having a topsurface higher than a top surface of the spacer; and removing portionsof the dielectric material and the CESL to form the sacrificial pattern,wherein the sacrificial pattern is disposed on the spacer and exposesthe CESL having the top surface substantially flush with the top surfaceof the spacer.
 20. The method as claimed in claim 15, wherein aninterface between the first hard mask layer and the second hard masklayer is curved.